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Volumn 8, Issue 4, 2008, Pages 997-1004

Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE-MATRIX OLED; ACTIVE-MATRIX ORGANIC LIGHT-EMITTING DIODES; AM-OLED; COMPACT SIZES; DRIVE ELECTRONICS; ELECTRICAL CHARACTERISTICS; FAST SWITCHING; FLEXIBLE DISPLAYS; LOW-TEMPERATURE FABRICATIONS; NANO-WIRE TRANSISTORS; ORGANIC LIGHT-EMITTING DIODES; PIXEL DIMENSIONS; PLASTIC SUBSTRATES; PORTABLE ELECTRONICS;

EID: 42349102358     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl072538+     Document Type: Article
Times cited : (231)

References (34)
  • 4
    • 61449262779 scopus 로고    scopus 로고
    • Ju, S. H.; Yu, S. H.; Kwon, J. H.; Kim, H. D.; Kim, B. H.; Kim, S. C.; Chung, H. K.; Weaver, M. S.; Lu, M. H.; Kwong, R. C; Hack, M.; Brown, J. J. SID Digest 2002, 37.3, 1096-1099.
    • Ju, S. H.; Yu, S. H.; Kwon, J. H.; Kim, H. D.; Kim, B. H.; Kim, S. C.; Chung, H. K.; Weaver, M. S.; Lu, M. H.; Kwong, R. C; Hack, M.; Brown, J. J. SID Digest 2002, 37.3, 1096-1099.
  • 6
  • 34
    • 61449178719 scopus 로고    scopus 로고
    • The sheet resistances of the ITO gate and S-D electrodes were measured on a Bia-Rad HL5500 van der Pauw Hall effect measurement system. The optical transmittance spectra of the devices were recorded with a Varian Cary 500 ultraviolet-visible-near-infrared spectrophotometer. Transistor characteristics of the NWT circuits were obtained using a Keithley 4200 semiconductor characterization system. The NW lengths of given transistors between the source and drain were obtained from the FE-SEM image (Hitachi S-4800) and accounted for the angle between the nanowire and the electrode edges. Optical emission from the AMOLED arrays was imaged using an optical microscope, and the luminescence was quantified with an IL 1700 research radiometer equipped with a calibrated photodetector.
    • The sheet resistances of the ITO gate and S-D electrodes were measured on a Bia-Rad HL5500 van der Pauw Hall effect measurement system. The optical transmittance spectra of the devices were recorded with a Varian Cary 500 ultraviolet-visible-near-infrared spectrophotometer. Transistor characteristics of the NWT circuits were obtained using a Keithley 4200 semiconductor characterization system. The NW lengths of given transistors between the source and drain were obtained from the FE-SEM image (Hitachi S-4800) and accounted for the angle between the nanowire and the electrode edges. Optical emission from the AMOLED arrays was imaged using an optical microscope, and the luminescence was quantified with an IL 1700 research radiometer equipped with a calibrated photodetector.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.