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The sheet resistances of the ITO gate and S-D electrodes were measured on a Bia-Rad HL5500 van der Pauw Hall effect measurement system. The optical transmittance spectra of the devices were recorded with a Varian Cary 500 ultraviolet-visible-near-infrared spectrophotometer. Transistor characteristics of the NWT circuits were obtained using a Keithley 4200 semiconductor characterization system. The NW lengths of given transistors between the source and drain were obtained from the FE-SEM image (Hitachi S-4800) and accounted for the angle between the nanowire and the electrode edges. Optical emission from the AMOLED arrays was imaged using an optical microscope, and the luminescence was quantified with an IL 1700 research radiometer equipped with a calibrated photodetector.
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The sheet resistances of the ITO gate and S-D electrodes were measured on a Bia-Rad HL5500 van der Pauw Hall effect measurement system. The optical transmittance spectra of the devices were recorded with a Varian Cary 500 ultraviolet-visible-near-infrared spectrophotometer. Transistor characteristics of the NWT circuits were obtained using a Keithley 4200 semiconductor characterization system. The NW lengths of given transistors between the source and drain were obtained from the FE-SEM image (Hitachi S-4800) and accounted for the angle between the nanowire and the electrode edges. Optical emission from the AMOLED arrays was imaged using an optical microscope, and the luminescence was quantified with an IL 1700 research radiometer equipped with a calibrated photodetector.
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