High performance In2O3 nanowire transistors using organic gate nanodielectrics

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Ju, Sanghyun ^a   Ishikawa, Fumiaki ^b   Chen, Pochiang ^b   Chang, Hsiao Kang ^b   Zhou, Chongwu ^b   Ha, Young Geun ^c   Liu, Jun ^c   Facchetti, Antonio ^c   Marks, Tobin J ^c   Janes, David B ^d  

^a Kyonggi University   (South Korea)

^b University of Southern California ^*  (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

^d PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; MULTITASKING;

HIGH PERFORMANCE; NANO-WIRE TRANSISTORS;

HIGH PERFORMANCE LIQUID CHROMATOGRAPHY;

EID: 44849131591     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937111     Document Type: Article

References (23)

1. J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C. M. Lieber, Nature (London) NATUAS 0028-0836 10.1038/nature04796 441, 489 (2006).
2. Y. Cui, Z. Zhong, D. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. NALEFD 1530-6984 10.1021/nl025875l 3, 149 (2003).
3. S. N. Cha, J. E. Jang, Y. Choi, G. W. Ho, D.-J. Kang, D. G. Hasko, M. E. Welland, and G. A. J. Amaratunga, Proceedings of the 38th European Solid-State Device Research Conference, 2005 (unpublished), Vol. 217.
4. W. Kim, A. Javey, R. Tu, J. Cao, Q. Wang, and H. Dai, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2108127 87, 173101 (2005).
5. K. Sreenivas, T. S. Rao, and A. Mansingh, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.335481 57, 384 (1985).
6. Y. Shigesato, S. Takaki, and T. Haranoh, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.350931 71, 3356 (1992).
7. J. Tamaki, C. Naruo, Y. Yamamoto, and M. Mastuoka, Sens. Actuators B SABCEB 0925-4005 10.1016/S0925-4005(01)01039-5 83, 190 (2002).
8. M. Liess, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(02)00209-2 410, 183 (2002).
9. M.-H. Yoon, A. Facchetti, and T. J. Marks, Proc. Natl. Acad. Sci. U.S.A. PNASA6 0027-8424 10.1073/pnas.0501027102 102, 4678 (2005).
10. C. Li, D. Zhang, S. Han, X. Liu, T. Tang, and C. Zhou, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/adma.200390029 15, 143 (2003).
11. B. Lei, C. Li, D. Zhang, T. Tang, and C. Zhou, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 10.1007/s00339-004-2707-x 79, 439 (2004).
12. D. Zhang, C. Li, S. Han, X. Liu, T. Tang, W. Jin, and C. Zhou, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1534938 82, 112 (2003).
13. N. Pho, H. T. Ng, T. Yamada, M. K. Smith, L. Jun, H. Jie, and M. Meyyappan, Nano Lett. NALEFD 1530-6984 10.1021/nl0498536 4, 651 (2004).
14. S. N. Cha, J. E. Jang, Y. Choi, G. A. J. Amaratunga, G. W. Ho, M. E. Welland, D. G. Hasko, D.-J. Kang, and J. M. Kim, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2416249 89, 263102 (2006).
15. T.-H. Moon, M.-C. Jeong, B.-Y. Oh, M.-H. Ham, M.-H. Jeun, W.-Y. Lee, and J.-M. Myung, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/17/9/007 17, 2116 (2006).
16. Y. W. Heo, L. C. Tien, Y. Kwon, D. P. Norton, S. J. Pearton, B. S. Kang, and F. Ren, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1794351 85, 2274 (2004).
17. S. Ju, K. Lee, D. B. Janes, M.-H. Yoon, A. Facchetti, and T. J. Marks, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/18/15/155201 18, 155201 (2007).
18. R. L. Weiher, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1702560 33, 2834 (1962).
19. S. Ju, K. Lee, D. B. Janes, M.-H. Yoon, A. Facchetti, and T. J. Marks, Nano Lett. NALEFD 1530-6984 10.1021/nl051658j 5, 2281 (2005).
20. R.-H. Yan, A. Ourmazd, and K. F. Lee, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.141237 39, 1704 (1992).
21. F. A. Padovani and R. Stratton, Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(66)90097-9 9, 695 (1966).
22. J. Appenzeller, J. Knoch, E. Tutuc, M. Reuter, and S. Guha, Proceedings of 2006 Intl. Elect. Dev. Meeting (IEDM), IEEE, 2006 (unpublished), Vol. 1.
23. Z. Yu and P. J. Burke, Proc. SPIE PSISDG 0277-786X 5790, 246 (2005).