DC modeling and the source of flicker noise in passivated carbon nanotube transistors

Nanotechnology

Volumn 21, Issue 38, 2010, Pages

  Kim, Sunkook ^a   Kim, Seongmin ^a   Janes, David B ^a   Mohammadi, Saeed ^a   Back, Juhee ^b   Shim, Moonsub ^b  

^a PURDUE UNIVERSITY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; ATOMIC LAYER DEPOSITED; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CARBON NANOTUBE TRANSISTORS; CHANNEL DEPLETION; CHARGE TRAPPING/DETRAPPING; DC MODELING; DRAIN-SOURCE VOLTAGE; ENVIRONMENTAL FACTORS; FLICKER NOISE; GATE ELECTRODES; GATED DEVICES; HFO2 GATE DIELECTRICS; INTRINSIC NOISE; LOW-FREQUENCY NOISE; OXIDE SUBSTRATES; PASSIVATION LAYER; SCHOTTKY BARRIER CONTACTS; TRANSPORT MECHANISM;

CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MESFET DEVICES; PASSIVATION; SCHOTTKY BARRIER DIODES; THERMAL NOISE; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77958531358     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/38/385203     Document Type: Article

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