Oxygen plasma exposure effects on indium oxide nanowire transistors

Nanotechnology

Volumn 21, Issue 14, 2010, Pages

  Kim, Seongmin ^a   Delker, Collin ^a   Chen, Pochiang ^b   Zhou, Chongwu ^b   Ju, Sanghyun ^c   Janes, David B ^a  

^a PURDUE UNIVERSITY   (United States)

^b University of Southern California ^*  (United States)

^c Kyonggi University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL REGION; DEVICE PERFORMANCE; DEVICE SIMULATORS; FIXED CHARGE DENSITY; INDIUM OXIDE NANOWIRES; INTERFACIAL TRAPS; NANOWIRE TRANSISTORS; OFF CURRENT; OXYGEN PLASMA EXPOSURE; OXYGEN PLASMAS; SCHOTTKY BARRIER HEIGHTS; SOURCE/DRAIN REGIONS; SUBTHRESHOLD SLOPE; TWO-TERMINAL DEVICES;

OXYGEN; SCHOTTKY BARRIER DIODES;

NANOWIRES;

EID: 77949546045     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/14/145207     Document Type: Article

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