Active-layer thickness effects related with microstructure, electrical properties and flicker noise in polycrystalline ZnO thin film transistors

AIP Conference Proceedings

Volumn 1399, Issue , 2011, Pages 891-892

  Jeong, K S ^a   Kim, Y M ^a   Park, J G ^a   Yang, S D ^a   Kim, Y S ^b   Lee, G W ^a  

^a Chungnam National University   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

Author keywords

1 f noise; gate bias stress; grain size; mobility fluctuation; ZnO TFT

Indexed keywords

EID: 84862782174     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3666662     Document Type: Conference Paper

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