Photostable Zn 2SnO 4 nanowire transistors for transparent displays

ACS Nano

Volumn 6, Issue 6, 2012, Pages 4912-4920

  Lim, Taekyung ^a   Kim, Hwansoo ^a   Meyyappan, M ^b,c   Ju, Sanghyun ^a  

^a Kyonggi University   (South Korea)

^b NASA AMES RESEARCH CENTER   (United States)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

display; nanowire; photostability; transistors; Zn 2SnO 4

Indexed keywords

BLACK MATERIALS; CHANNEL AREA; DEVICE OPERATIONS; EXTERNAL ILLUMINATION; INITIAL STATE; NANOWIRE TRANSISTORS; NEGATIVE SHIFT; PHOTO-STABILITY; PHOTOSTABLE; SUBTHRESHOLD SLOPE; TRANSPARENT DISPLAYS; ZNO;

DISPLAY DEVICES; LIGHT SOURCES; TRANSISTORS; ZINC; ZINC OXIDE;

NANOWIRES;

NANOTUBE; TIN DERIVATIVE; TIN DIOXIDE; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; LIGHT; MATERIALS TESTING; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION EXPOSURE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHT; LIGHTING; MATERIALS TESTING; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SURFACE PROPERTIES; TIN COMPOUNDS; TRANSISTORS, ELECTRONIC; ZINC OXIDE;

EID: 84862859375     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn300401w     Document Type: Article

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