Hooge's constant for carbon nanotube field effect transistors

Applied Physics Letters

Volumn 88, Issue 20, 2006, Pages

  Ishigami, Masa ^a   Chen, J H ^a   Williams, E D ^a   Tobias, David ^a   Chen, Y F ^a   Fuhrer, M S ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL VOLTAGE; GATE VOLTAGE; HOOGE'S CONSTANT; SPECTRAL NOISE;

CARBON NANOTUBES; CARRIER MOBILITY; CURRENT DENSITY; GATES (TRANSISTOR); SPURIOUS SIGNAL NOISE; VACUUM APPLICATIONS;

FIELD EFFECT TRANSISTORS;

EID: 33646869994     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2206685     Document Type: Article

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