Effect of Sn dopant on the properties of ZnO nanowires

Journal of Physics D: Applied Physics

Volumn 37, Issue 16, 2004, Pages 2274-2282

  Li, Seu Yi ^a   Lin, Pang ^a   Lee, Chia Ying ^a   Tseng, Tseung Yuen ^a   Huang, Chorng Jye ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ENERGY GAP; FLAT PANEL DISPLAYS; LASER APPLICATIONS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; TIN; WIRE;

DOPANTS; MOLE FRACTION; NANOWIRES; VAPOR-LIQUID-SOLID (VLS) PROCESSES;

ZINC OXIDE;

EID: 4344675585     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/16/009     Document Type: Article

References (26)

1. Li S Y, Lee C Y and Tseng T Y 2003 J. Cryst. Growth 247 357
2. Zhang J and Zhang L 2002 Chem. Phys. Lett. 363 293
3. Wang N, Zhang Y F, Tang Y H, Lee C S and Lee S T 1998 Phys. Rev. B 58 16024
4. Huang M H, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R and Yang P 2000 Science 1292 1897
5. Björk M T, Ohlsson B J, Sass T, Persson AI, Thelander C, Magnusson M H, Deppert K, Wallenberg L R and Samuelson L 2002 Appl. Phys. Lett. 80 1058
6. Bagnall D M, Chen Y F, Zhu Z, Yao T, Koyama S, Shen M Y and Goto T 1997 Appl. Phys. Lett. 70 2230
7. Lee Y S and Tseng T Y 1998 J. Mater. Sci. Mater. Electron. 965
8. Wang Y W, Zhang L D, Wang G Z, Peng X S, Chu Z Q and Liang C H 2002 J. Cryst. Growth 234 171
9. Wang R P, Xu G and Jin P 2004 Phys. Rev. B 69 113303
10. Gomi M, Oohira N, Ozaki K and Koyano M 2003 Japan. J. Appl. Phys. 42 481
11. Sun H D, Makino T, Tuan N T, Segawa Y, Kawasaki M, Ohtomo A, Tamura K and Koinuma H 2001 Appl. Phys. Lett. 78 2464
12. Decremps F, Porres J P, Saitta A M, Chervin J C and Polian A 2002 Phys. Rev. B. 65 92101
13. Li S Y, Lin P, Lee C Y and Tseng T Y 2004 J. Appl. Phys. 95 3711
14. Li S Y, Lin P, Lee C Y and Tseng T Y J. Mater. Sci. Mater. Electron. 15 505
15. Morales A M and Leiber C M 1998 Science 279 208
16. Wu Y, Fan R and Yang P 2002 Int. J. Nano 11
17. Li Y, Meng G W, Zhang L D and Phillip F 2000 Appl. Phys. Lett. 76 2011
18. Choy J H, Jang E S, Won J H, Chung J H, Jang D J and Kim Y W 2004 Appl. Phys. Lett. 84 287
19. JCPDS-ICDD 1998 version. 2.0
20. Chevalier P Y 1988 Thermo Chem. Acta 130 1
21. Maroie S, Haemers G and Verbist J J 1984 Appl. Surf. Sci. 17 463
22. Bougrine A, Hichou A E, Addou M, Ebothé J, Kachouane A and Troyon M 2003 Mater. Chem. Phys. 80 438
23. Hao J H and Cocivera M 2002 J. Appl. Phys. D: Appl. Phys. 35 433
24. Lee C J, Lee T J, Lyu S C, Zhang Y, Ruh H and Lee H J 2002 Appl. Phys. Lett. 81 3648
25. Jo S H, Tu Y, Huang Z P, Carnahan D L, Huang J Y, Wang D Z and Ren Z F 2004 Appl. Phys. Lett. 84 413
26. Bonard J M, Klinke C, Dean K A and Coll B F 2003 Phys. Rev. B 67 115406