Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation

Journal of Applied Physics

Volumn 113, Issue 21, 2013, Pages

  Ochedowski, O ^a   Marinov, K ^a   Wilbs, G ^a   Keller, G ^a   Scheuschner, N ^b   Severin, D ^c   Bender, M ^c   Maultzsch, J ^b   Tegude, F J ^a   Schleberger, M ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c GSI HELMHOLTZZENTRUM FÜR SCHWERIONENFORSCHUNG GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERIZATION; FIELD-EFFECT DEVICES; RADIATION HARDNESS; SINGLE LAYER; STRUCTURAL AND ELECTRICAL PROPERTIES; SWIFT HEAVY ION IRRADIATION; SWIFT HEAVY IONS; TWO-DIMENSIONAL MATERIALS;

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GRAPHENE; HEAVY IONS; MOLYBDENUM COMPOUNDS; RAMAN SPECTROSCOPY;

IRRADIATION;

EID: 84879329622     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4808460     Document Type: Article

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