메뉴 건너뛰기




Volumn 109, Issue 10, 2011, Pages

Effective mobility of single-layer graphene transistors as a function of channel dimensions

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL DIMENSION; CHANNEL LENGTH; CHANNEL WIDTHS; CHEMICAL VAPOR DEPOSITED; COMPARATIVE ANALYSIS; DIFFUSIVE TRANSPORT REGIME; EDGE SCATTERING; EFFECTIVE MOBILITIES; ELECTRICAL MEASUREMENT; FRINGING FIELDS; GRAPHENE DEVICES; GRAPHENE TRANSISTORS; LENGTH DEPENDENCE; MOBILITY VALUE; OXIDE THICKNESS; SINGLE LAYER; SMALL CHANNELS; THEORETICAL STUDY;

EID: 79958861716     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3592338     Document Type: Conference Paper
Times cited : (133)

References (28)
  • 16
    • 79958784466 scopus 로고    scopus 로고
    • See. for information about the Van der Pauw measurement setu
    • See www.nist.gov/eeel/semiconductor/hall.cfm. for information about the Van der Pauw measurement setup.
  • 17
    • 27744475163 scopus 로고    scopus 로고
    • Experimental observation of the quantum Hall effect and Berry's phase in graphene
    • DOI 10.1038/nature04235, PII N04235
    • Y. Zhang, Y.-W. Tan, H. L. Stormer, and P. Kim, Nature 438, 201 (2005). 10.1038/nature04235 (Pubitemid 41599868)
    • (2005) Nature , vol.438 , Issue.7065 , pp. 201-204
    • Zhang, Y.1    Tan, Y.-W.2    Stormer, H.L.3    Kim, P.4
  • 27


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.