Ballistic I-v characteristics of short-channel graphene field-effect transistors: Analysis and optimization for analog and RF applications

IEEE Transactions on Electron Devices

Volumn 60, Issue 3, 2013, Pages 958-964

  Ganapathi, Kartik ^a   Yoon, Youngki ^a   Lundstrom, Mark ^b   Salahuddin, Sayeef ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Purdue University   (United States)

Author keywords

Cutoff frequency; intrinsic gain; output resistance; quasi saturation; scaling behavior; short channel graphene field effect transistors (GFETs)

Indexed keywords

GRAPHENE FIELD-EFFECT TRANSISTORS; INTRINSIC GAIN; OUTPUT RESISTANCE; QUASI-SATURATION; SCALING BEHAVIOR;

BALLISTICS; CUTOFF FREQUENCY; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; OPTIMIZATION;

GRAPHENE;

EID: 84874663749     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2238236     Document Type: Article

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