Mega-electron-volt proton irradiation on supported and suspended graphene: A Raman spectroscopic layer dependent study

Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

  Mathew, S ^a   Chan, T K ^a   Zhan, D ^b   Gopinadhan, K ^a   Roy Barman, A ^a   Breese, M B H ^a   Dhar, S ^a   Shen, Z X ^b   Venkatesan, T ^a   Thong, John T L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BILAYER; DEFECT CREATION; ETCHED HOLES; FLUENCES; ION-INDUCED DEFECTS; MEGA-ELECTRON-VOLT; NUMBER OF LAYERS; RAMAN MICROSCOPY; RAMAN SPECTROSCOPIC; UV-RAMAN SPECTROSCOPY; VIBRATIONAL MODES; VISIBLE RAMAN SPECTRA;

DEFECTS; MONOLAYERS; PROTON IRRADIATION; PROTONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON COMPOUNDS;

GRAPHENE;

EID: 80655132029     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3647781     Document Type: Article

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