Raman study of ion-induced defects in N -layer graphene

Journal of Physics Condensed Matter

Volumn 22, Issue 33, 2010, Pages

  Jorio, Ado ^a,b   Lucchese, Marcia M ^b   Stavale, Fernando ^b   Ferreira, Erlon H Martins ^b   Moutinho, Marcus V O ^c   Capaz, Rodrigo B ^b,c   Achete, Carlos A ^b,c  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b INSTITUTO NACIONAL DE METROLOGIA   (Brazil)

^c FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE SHEETS; INTEGRATED INTENSITIES; INTENSITY RATIO; ION FLUENCES; ION-INDUCED DEFECTS; LOW ENERGIES; LOW-ENERGY AR; NUMBER OF LAYERS; RAMAN INTENSITIES; RAMAN STUDIES;

GRAPHENE; IONS;

ION BOMBARDMENT;

GRAPHITE; HEAVY ION; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; RADIATION DOSE; RADIATION EXPOSURE; RAMAN SPECTROMETRY; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; GRAPHITE; HEAVY IONS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; RADIATION DOSAGE; SPECTRUM ANALYSIS, RAMAN; SURFACE PROPERTIES;

EID: 77956804161     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/33/334204     Document Type: Article

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