Influence of an atom in EGaIn/Ga2O3 tunneling junctions comprising self-assembled monolayers

Journal of Physical Chemistry C

Volumn 117, Issue 21, 2013, Pages 11367-11376

  Fracasso, Davide ^a   Muglali, Mutlu Iskender ^b   Rohwerder, Michael ^b   Terfort, Andreas ^c   Chiechi, Ryan C ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

^c GOETHE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE MEASUREMENT; DENSITY FUNCTIONAL THEORY CALCULATIONS; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOMOLOGOUS SERIES; LENGTH DEPENDENCE; ODD-EVEN EFFECTS; TRANSITION VOLTAGE; TUNNELING JUNCTIONS;

AROMATIC COMPOUNDS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; FUNCTIONAL GROUPS; LIQUID METALS; ORGANIC POLYMERS; SELF ASSEMBLED MONOLAYERS;

ELECTRIC PROPERTIES;

EID: 84878352585     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp401703p     Document Type: Article

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