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Volumn 132, Issue 51, 2010, Pages 18386-18401

Mechanism of rectification in tunneling junctions based on molecules with asymmetric potential drops

Author keywords

[No Author keywords available]

Indexed keywords

AG ELECTRODE; ALKANETHIOLATES; ASYMMETRIC POTENTIAL; BOTTOM ELECTRODES; HEAD GROUPS; RECTIFICATION RATIO; STANDARD DEVIATION; TUNNELING JUNCTIONS;

EID: 78650494279     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja108311j     Document Type: Article
Times cited : (218)

References (78)
  • 29
    • 78650597481 scopus 로고    scopus 로고
    • 3/EGaIn in contact with a glass substrate indicate that only ∼25% of the measured junctions' size is in contact with the SAM.
    • 3/EGaIn in contact with a glass substrate indicate that only ∼25% of the measured junctions' size is in contact with the SAM.
  • 33
    • 78650621806 scopus 로고    scopus 로고
    • The model does not account for a change in the mechanism of charge transport. Molecular orbitals that are energetically accessible may enable hopping.
    • The model does not account for a change in the mechanism of charge transport. Molecular orbitals that are energetically accessible may enable hopping.
  • 70
    • 78650586511 scopus 로고    scopus 로고
    • 3 layer or dipole-dipole interactions.
    • 3 layer or dipole-dipole interactions.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.