The SAM, not the electrodes, dominates charge transport in metal-monolayer//Ga 2O 3/gallium-indium eutectic junctions

ACS Nano

Volumn 6, Issue 6, 2012, Pages 4806-4822

  Reus, William F ^a   Thuo, Martin M ^a   Shapiro, Nathan D ^a   Nijhuis, Christian A ^a,b,c   Whitesides, George M ^a,d  

^a HARVARD UNIVERSITY   (United States)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c National University of Singapore   (Singapore)

^d HARVARD UNIVERSITY   (United States)

Author keywords

charge transport; junctions; molecular electronics; molecular rectification; self assembled monolayers

Indexed keywords

ELECTRICAL CHARACTERISTIC; ELECTRICAL CONTACTS; MOLECULAR RECTIFICATIONS; POTENTIAL MECHANISM; SAMS;

CHARGE TRANSFER; ELECTRIC RECTIFIERS; ELECTRODES; EUTECTICS; GALLIUM; INDIUM; MOLECULAR ELECTRONICS; MOLECULAR ORBITALS; SELF ASSEMBLED MONOLAYERS; WAVEGUIDE JUNCTIONS;

SILVER;

GALLIUM; INDIUM;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CONFORMATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; HARDNESS; MATERIALS TESTING; MICROELECTRODE; SOLUTION AND SOLUBILITY; SURFACE PROPERTY;

ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; HARDNESS; INDIUM; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MICROELECTRODES; MOLECULAR CONFORMATION; SOLUTIONS; SURFACE PROPERTIES;

EID: 84862889433     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn205089u     Document Type: Review

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