Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors

Nanotechnology

Volumn 22, Issue 26, 2011, Pages

  Lin, Ming Wei ^a   Ling, Cheng ^a   Zhang, Yiyang ^a,b   Yoon, Hyeun Joong ^b   Cheng, Mark Ming Cheng ^b   Agapito, Luis A ^c   Kioussis, Nicholas ^c   Widjaja, Noppi ^a   Zhou, Zhixian ^a  

^a WAYNE STATE UNIVERSITY   (United States)

^b Wayne State University   (United States)

^c CALIFORNIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; ANNEALING CURRENT; BAND GAPS; CURRENT ANNEALING; ELECTRICAL PROPERTY; ELECTRICAL TRANSPORT MEASUREMENTS; FABRICATED DEVICE; FIELD-EFFECT; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBONS; MECHANICALLY STABLE; ON/OFF RATIO; ROOM TEMPERATURE; TRANSFER CHARACTERISTICS;

ANNEALING; ELECTRIC PROPERTIES; GRAPHENE; MULTIWALLED CARBON NANOTUBES (MWCN); TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79957812586     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/26/265201     Document Type: Article

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