Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors

Nano Letters

Volumn 6, Issue 7, 2006, Pages 1454-1458

  Keem, Kihyun ^a   Jeong, Dong Young ^a   Kim, Sangsig ^a   Lee, Moon Sook ^b   Yeo, In Seok ^b   Chung, U In ^b   Moon, Joo Tae ^b  

^a Korea University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); PHOTOLITHOGRAPHY; SUBSTRATES; TRANSCONDUCTANCE; ZINC OXIDE;

GATE DIELECTRIC; NANOWIRE CHANNELS; OMEGA SHAPED GATE (OSG); SI SUBSTRATES;

NANOSTRUCTURED MATERIALS;

ALUMINUM OXIDE; NANOMATERIAL; ZINC OXIDE;

ARTICLE; CHEMISTRY; EQUIPMENT DESIGN; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY;

ALUMINUM OXIDE; EQUIPMENT DESIGN; MICROSCOPY, SCANNING TUNNELING; NANOSTRUCTURES; SURFACE PROPERTIES; TRANSISTORS; ZINC OXIDE;

EID: 33746864879     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl060708x     Document Type: Article

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