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Applied Physics Letters

Volumn 97, Issue 14, 2010, Pages

High-performance n -type organic field-effect transistors with ionic liquid gates

(5) Ono, S a,b Minder, N a Chen, Z c Facchetti, A c Morpurgo, A F a

a UNIVERSITY OF GENEVA (Switzerland)

b CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY (Japan)

c POLYERA CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT ATMOSPHERE; GATE VOLTAGES; HIGH QUALITY; MOBILITY VALUE; N-TYPE ORGANIC SEMICONDUCTOR; ORGANIC TRANSISTOR; TRANSPORT MEASUREMENTS;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); IONIC LIQUIDS; ORGANIC FIELD EFFECT TRANSISTORS; PHASE INTERFACES; SINGLE CRYSTALS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77958039936 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3493190 Document Type: Article

Times cited : (57)

References (22)

1
- 21244463123
- PHTOAD 0031-9228 (),. 10.1063/1.1995748
- G. Malliaras and R. Friend, Phys. Today PHTOAD 0031-9228 58 (5), 53 (2005). 10.1063/1.1995748
- (2005) Phys. Today , vol.58 , Issue.5 , pp. 53
- Malliaras, G.¹ Friend, R.²

2
- 15244338556
- General observation of n-type field-effect behaviour in organic semiconductors
- DOI 10.1038/nature03376
- L. -L. Chua, J. Zaumseil, J. -F. Chang, E. C.-W. Ou, P. K.-H. Ho, H. Sirringhaus, and R. Friend, Nature (London) NATUAS 0028-0836 434, 194 (2005). 10.1038/nature03376 (Pubitemid 40388045)
- (2005) Nature , vol.434 , Issue.7030 , pp. 194-199
- Chua, L.-L.¹ Zaumseil, J.² Chang, J.-F.³ Ou, E.C.-W.⁴ Ho, P.K.-H.⁵ Sirringhaus, H.⁶ Friend, R.H.⁷

3
- 0037355810
- AFMDC6 1616-301X,. 10.1002/adfm.200390030
- J. Veres, S. D. Ogier, S. W. Leeming, D. C. Cupertino, and S. M. Khaffaf, Adv. Funct. Mater. AFMDC6 1616-301X 13, 199 (2003). 10.1002/adfm.200390030
- (2003) Adv. Funct. Mater. , vol.13 , pp. 199
- Veres, J.¹ Ogier, S.D.² Leeming, S.W.³ Cupertino, D.C.⁴ Khaffaf, S.M.⁵

4
- 9744261680
- APPLAB 0003-6951, () 10.1063/1.1812368;, Nature Mater. NMAACR 1476-1122 5, 982 (2006). 10.1038/nmat1774
- A. F. Stassen, R. W. I. de Boer, N. N. Iosad, and A. F. Morpurgo, Appl. Phys. Lett. APPLAB 0003-6951 85, 3899 (2004) 10.1063/1.1812368; I. N. Hulea, S. Fratini, H. Xie, C. L. Mulder, N. N. Iossad, G. Rastelli, S. Ciuchi, and A. F. Morpurgo, Nature Mater. NMAACR 1476-1122 5, 982 (2006). 10.1038/nmat1774
- (2004) Appl. Phys. Lett. , vol.85 , pp. 3899
- Stassen, A.F.¹ De Boer, R.W.I.² Iosad, N.N.³ Morpurgo, A.F.⁴ Hulea, I.N.⁵ Fratini, S.⁶ Xie, H.⁷ Mulder, C.L.⁸ Iossad, N.N.⁹ Rastelli, G.¹⁰ Ciuchi, S.¹¹ Morpurgo, A.F.¹²

5
- 34547661692
- 60 and pentacene transistors on glass substrates
- DOI 10.1063/1.2759981
- M. Kitamura and Y. Arakawa, Appl. Phys. Lett. APPLAB 0003-6951 91, 053505 (2007). 10.1063/1.2759981 (Pubitemid 47210860)
- (2007) Applied Physics Letters , vol.91 , Issue.5 , pp. 053505
- Kitamura, M.¹ Arakawa, Y.²

6
- 33847111592
- Ultralow-power organic complementary circuits
- DOI 10.1038/nature05533, PII NATURE05533
- H. Klauk, U. Zschieschang, J. Pflaum, and M. Halik, Nature (London) NATUAS 0028-0836 445, 745 (2007). 10.1038/nature05533 (Pubitemid 46279711)
- (2007) Nature , vol.445 , Issue.7129 , pp. 745-748
- Klauk, H.¹ Zschieschang, U.² Pflaum, J.³ Halik, M.⁴

7
- 59849104810
- APPLAB 0003-6951,. 10.1063/1.3077192
- M. P. Walser, W. L. Kalb, T. Mathis, T. J. Brenner, and B. Batlogg, Appl. Phys. Lett. APPLAB 0003-6951 94, 053303 (2009). 10.1063/1.3077192
- (2009) Appl. Phys. Lett. , vol.94 , pp. 053303
- Walser, M.P.¹ Kalb, W.L.² Mathis, T.³ Brenner, T.J.⁴ Batlogg, B.⁵

8
- 18744404507
- Polymer electrolyte gate dielectric reveals finite windows of high conductivity in organic thin film transistors at high charge carrier densities
- DOI 10.1021/ja051579+
- M. J. Panzer and C. D. Frisbie, J. Am. Chem. Soc. JACSAT 0002-7863 127, 6960 (2005). 10.1021/ja051579+ (Pubitemid 40676718)
- (2005) Journal of the American Chemical Society , vol.127 , Issue.19 , pp. 6960-6961
- Panzer, M.J.¹ Frisbie, C.D.²

9
- 33646890726
- High charge carrier densities and conductance maxima in single-crystal organic field-effect transistors with a polymer electrolyte gate dielectric
- DOI 10.1063/1.2204846
- M. J. Panzer and C. D. Frisbie, Appl. Phys. Lett. APPLAB 0003-6951 88, 203504 (2006). 10.1063/1.2204846 (Pubitemid 43781831)
- (2006) Applied Physics Letters , vol.88 , Issue.20 , pp. 203504
- Panzer, M.J.¹ Frisbie, C.D.²

10
- 33645139791
- APPLAB 0003-6951,. 10.1063/1.2186513
- J. Takeya, K. Yamada, K. Hara, K. Shigeto, K. Tsukagoshi, S. Ikehata, and Y. Aoyagi, Appl. Phys. Lett. APPLAB 0003-6951 88, 112102 (2006). 10.1063/1.2186513
- (2006) Appl. Phys. Lett. , vol.88 , pp. 112102
- Takeya, J.¹ Yamada, K.² Hara, K.³ Shigeto, K.⁴ Tsukagoshi, K.⁵ Ikehata, S.⁶ Aoyagi, Y.⁷

11
- 33751109707
- Electrolyte-gated charge accumulation in organic single crystals
- DOI 10.1063/1.2387884
- H. Shimotani, H. Asanuma, J. Takeya, and Y. Iwasa, Appl. Phys. Lett. APPLAB 0003-6951 89, 203501 (2006). 10.1063/1.2387884 (Pubitemid 44772522)
- (2006) Applied Physics Letters , vol.89 , Issue.20 , pp. 203501
- Shimotani, H.¹ Asanuma, H.² Takeya, J.³ Iwasa, Y.⁴

12
- 34247475218
- Ion gel gated polymer thin-film transistors
- DOI 10.1021/ja070875e
- J. Lee, M. J. Panzer, Y. He, T. P. Lodge, and C. D. Frisbie, J. Am. Chem. Soc. JACSAT 0002-7863 129, 4532 (2007). 10.1021/ja070875e (Pubitemid 46648748)
- (2007) Journal of the American Chemical Society , vol.129 , Issue.15 , pp. 4532-4533
- Lee, J.¹ Panzer, M.J.² He, Y.³ Lodge, T.P.⁴ Frisbie, C.D.⁵

13
- 33846941890
- APPLAB 0003-6951,. 10.1063/1.2437663
- R. Misra, M. McCarthy, and A. F. Hebard, Appl. Phys. Lett. APPLAB 0003-6951 90, 052905 (2007). 10.1063/1.2437663
- (2007) Appl. Phys. Lett. , vol.90 , pp. 052905
- Misra, R.¹ McCarthy, M.² Hebard, A.F.³

14
- 84988044894
- NMAACR 1476-1122,. 10.1038/nmat2291
- J. H. Cho, J. Lee, Y. Xia, B. Kim, Y. He, M. J. Renn, T. P. Lodge, and C. D. Frisbie, Nature Mater. NMAACR 1476-1122 7, 900 (2008). 10.1038/nmat2291
- (2008) Nature Mater. , vol.7 , pp. 900
- Cho, J.H.¹ Lee, J.² Xia, Y.³ Kim, B.⁴ He, Y.⁵ Renn, M.J.⁶ Lodge, T.P.⁷ Frisbie, C.D.⁸

15
- 40849094610
- High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids
- DOI 10.1063/1.2898203
- S. Ono, S. Seki, R. Hirahara, Y. Tominari, and J. Takeya, Appl. Phys. Lett. APPLAB 0003-6951 92, 103313 (2008). 10.1063/1.2898203 (Pubitemid 351394005)
- (2008) Applied Physics Letters , vol.92 , Issue.10 , pp. 103313
- Ono, S.¹ Seki, S.² Hirahara, R.³ Tominari, Y.⁴ Takeya, J.⁵

16
- 58149260031
- APPLAB 0003-6951,. 10.1063/1.3059561
- T. Uemura, R. Hirahara, Y. Tominari, S. Ono, S. Seki, and J. Takeya, Appl. Phys. Lett. APPLAB 0003-6951 93, 263305 (2008). 10.1063/1.3059561
- (2008) Appl. Phys. Lett. , vol.93 , pp. 263305
- Uemura, T.¹ Hirahara, R.² Tominari, Y.³ Ono, S.⁴ Seki, S.⁵ Takeya, J.⁶

17
- 60349112652
- APPLAB 0003-6951,. 10.1063/1.3079401
- S. Ono, K. Miwa, S. Seki, and J. Takeya, Appl. Phys. Lett. APPLAB 0003-6951 94, 063301 (2009). 10.1063/1.3079401
- (2009) Appl. Phys. Lett. , vol.94 , pp. 063301
- Ono, S.¹ Miwa, K.² Seki, S.³ Takeya, J.⁴

18
- 70249128643
- APPLAB 0003-6951,. 10.1063/1.3225153
- T. Uemura, M. Yamagishi, S. Ono, and J. Takeya, Appl. Phys. Lett. APPLAB 0003-6951 95, 103301 (2009). 10.1063/1.3225153
- (2009) Appl. Phys. Lett. , vol.95 , pp. 103301
- Uemura, T.¹ Yamagishi, M.² Ono, S.³ Takeya, J.⁴

19
- 11144332890
- High-mobility air-stable n-type semiconductors with processing versatility: Dicyanoperylene-3,4:9,10-bis(dicarboximides)
- DOI 10.1002/anie.200461324
- B. A. Jones, M. J. Ahrens, M. -H. Yoon, A. Facchetti, T. J. Marks, and M. R. Wasielewski, Angew. Chem., Int. Ed. ACIEF5 1433-7851 43, 6363 (2004). 10.1002/anie.200461324 (Pubitemid 40029473)
- (2004) Angewandte Chemie - International Edition , vol.43 , Issue.46 , pp. 6363-6366
- Jones, B.A.¹ Ahrens, M.J.² Yoon, M.-H.³ Facchetti, A.⁴ Marks, T.J.⁵ Wasielewski, M.R.⁶

20
- 33646522994
- APPLAB 0003-6951,. 10.1063/1.2200591
- T. Jung, B. Yoo, L. Wang, A. Dodabalapur, B. A. Jones, A. Facchetti, M. R. Wasielewski, and T. J. Marks, Appl. Phys. Lett. APPLAB 0003-6951 88, 183102 (2006). 10.1063/1.2200591
- (2006) Appl. Phys. Lett. , vol.88 , pp. 183102
- Jung, T.¹ Yoo, B.² Wang, L.³ Dodabalapur, A.⁴ Jones, B.A.⁵ Facchetti, A.⁶ Wasielewski, M.R.⁷ Marks, T.J.⁸

21
- 67849097766
- JACSAT 0002-7863,. 10.1021/ja809848y
- A. S. Molinari, H. Alves, Z. Chen, A. Facchetti, and A. F. Morpurgo, J. Am. Chem. Soc. JACSAT 0002-7863 131, 2462 (2009). 10.1021/ja809848y
- (2009) J. Am. Chem. Soc. , vol.131 , pp. 2462
- Molinari, A.S.¹ Alves, H.² Chen, Z.³ Facchetti, A.⁴ Morpurgo, A.F.⁵

22
- 11344269281
- High-performance n- And p-type single-crystal organic transistors with free-space gate dielectrics
- DOI 10.1002/adma.200401017
- E. Menard, V. Podzorov, S. H. Hur, A. Gaur, M. E. Gershenson, and J. A. Rogers, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 16, 2097 (2004). 10.1002/adma.200401017 (Pubitemid 40072900)
- (2004) Advanced Materials , vol.16 , Issue.23-24 , pp. 2097-2101
- Menard, E.¹ Podzorov, V.² Hur, S.-H.³ Gaur, A.⁴ Gershenson, M.E.⁵ Rogers, J.A.⁶

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