NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al2O3 gate layers

Nanotechnology

Volumn 19, Issue 26, 2008, Pages

  Yeom, Donghyuk ^a   Keem, Kihyun ^a   Kang, Jeongmin ^a   Jeong, Dong Young ^a   Yoon, Changjoon ^a   Kim, Dongseung ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC WIRE; FUZZY LOGIC; LOGIC CIRCUITS; LOGIC DEVICES; NANOSTRUCTURES; NANOWIRES; PHOTOACOUSTIC EFFECT; SEMICONDUCTING ZINC COMPOUNDS; SWITCHING CIRCUITS; SWITCHING THEORY; TRANSISTORS; ZINC ALLOYS; ZINC OXIDE;

ELECTRICAL CHARACTERISTICS; FIELD EFFECT TRANSISTOR (FET); ZNO NANOWIRE;

FIELD EFFECT TRANSISTORS;

ALUMINUM OXIDE; NANOWIRE; ZINC OXIDE;

ARTICLE; ELECTRIC POTENTIAL; ELECTRICITY; ELECTRODE; ENERGY TRANSFER; FIELD EFFECT TRANSISTOR; INTEGRATED CIRCUIT; LOGIC; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 44949114116     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/26/265202     Document Type: Article

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