Chemical surface passivation of HfO2 films in a ZnO nanowire transistor

Nanotechnology

Volumn 17, Issue 9, 2006, Pages 2116-2121

  Moon, Tae Hyoung ^a   Jeong, Min Chang ^a   Oh, Byeong Yun ^a   Ham, Moon Ho ^a   Jeun, Min Hong ^a   Lee, Woo Young ^a   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; PASSIVATION; ZINC OXIDE;

BACK-GATED ZNO NANOWIRE; CHEMICAL SURFACE STRUCTURE; NANOWIRE TRANSISTOR;

NANOSTRUCTURED MATERIALS;

EID: 33646172374     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/9/007     Document Type: Article

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