Ion gel-gated polymer thin-film transistors: Operating mechanism and characterization of gate dielectric capacitance, switching speed, and stability

Journal of Physical Chemistry C

Volumn 113, Issue 20, 2009, Pages 8972-8981

  Lee, Jiyoul ^a   Kaake, Loren G ^a   Cho, H Jeong ^a   Zhu, X Y ^a   Lodge, Timothy P ^a   Frisbie, C Daniel ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATTENUATED TOTAL INTERNAL REFLECTION; CARRIER DENSITY; CONDUCTANCE SWITCHING; DIELECTRIC CAPACITANCE; DIFFUSIVITIES; ELECTROCHEMICAL DOPING; FIELD EFFECTS; GATE STACKS; HIGH CONCENTRATION; HOLE DENSITIES; ION GELS; ION PENETRATION DEPTH; METHYL METHACRYLATES; MOBILE IONS; NEAR INFRARED; OFF CURRENT; OPERATING MECHANISM; ORGANIC TFTS; POLARON ABSORPTION; POLY (3-HEXYLTHIOPHENE); POLY-THIOPHENE; POLYMER SEMICONDUCTORS; PROCESSABLE; REGIO-REGULAR; ROOM TEMPERATURE; SELF-ASSEMBLED NETWORKS; SEMICONDUCTOR INTERFACES; SWITCHING MECHANISM; SWITCHING SPEED; TIME DEPENDENCE; TIME-SCALE; TRIBLOCK COPOLYMERS; VERY LOW VOLTAGE;

CAPACITANCE; CUTOFF FREQUENCY; DIELECTRIC MATERIALS; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); GELS; INFRARED SPECTROSCOPY; IONIC CONDUCTION; IONIC LIQUIDS; IONIZATION OF LIQUIDS; NEGATIVE IONS; POLYMERS; REFRACTIVE INDEX; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING; STYRENE; SULFUR COMPOUNDS; SWITCHING; THIN FILM DEVICES; THIN FILM TRANSISTORS; WIRELESS NETWORKS;

GELATION;

EID: 67649184909     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp901426e     Document Type: Article

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