SCOPUS 정보 검색 플랫폼

Volumn 89, Issue 19, 2006, Pages

Effects of bias stress on ZnO nanowire field-effect transistors fabricated with organic gate nanodielectrics

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN STRESSES; NANOWIRES; ORGANIC GATE INSULATORS; ORGANIC GATE NANODIELECTRICS;

ELECTRIC INSULATORS; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; THRESHOLD VOLTAGE; ZINC OXIDE;

STRESSES;

EID: 33750898646 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2378445 Document Type: Article

Times cited : (42)

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