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Volumn 62, Issue 5, 2013, Pages

Recent progress in preparation of material and device of two-dimensional MoS2

Author keywords

Integrated circuit; MoS2; Nanomaterial

Indexed keywords

CRITICAL DIMENSION; MOLYBDENUM DISULFIDE; MOS2; NANOMATERIAL; PROPERTY ANALYSIS; RECENT PROGRESS; SEMICONDUCTOR PROPERTIES; TWO-DIMENSIONAL MATERIALS;

EID: 84875583886     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: 10.7498/aps.62.056801     Document Type: Review
Times cited : (8)

References (48)
  • 3
    • 75849129626 scopus 로고    scopus 로고
    • (in Chinese)
    • Ni P G 2010 Acta Phys. Sin. 59 340 (in Chinese)
    • (2010) Acta Phys. Sin. , vol.59 , pp. 340
    • Ni, P.G.1
  • 41


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.