Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling

Nanotechnology

Volumn 24, Issue 14, 2013, Pages

  Alves, A D C ^a   Newnham, J ^a   Van Donkelaar, J A ^a   Rubanov, S ^b   McCallum, J C ^a   Jamieson, D N ^a  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE CHARACTERISTICS; FABRICATING PROCESS; FOCUSED ION BEAM MILLING; NANOSTENCIL LITHOGRAPHIES; PROOF-OF-PRINCIPLE DEVICE; SOLID STATE ELECTRONIC DEVICES; STATISTICAL VARIATIONS; TECHNOLOGICAL CHALLENGES;

ATOMS; FABRICATION; ION IMPLANTATION; QUANTUM THEORY; RAPID PROTOTYPING; SILICON;

IONS;

EID: 84875156795     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/14/145304     Document Type: Article

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