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Nanotechnology

Volumn 21, Issue 8, 2010, Pages

Single ion implantation for single donor devices using Geiger mode detectors

(3) Bielejec, E a Seamons, J A a Carroll, M S a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CRYOGENIC OPERATIONS; DEFECT CENTERS; DETECTION EFFICIENCY; DETECTION WINDOWS; DETECTOR SENSITIVITY; DEVICE PERFORMANCE; ELECTRON HOLE PAIRS; ELECTRONIC DEVICE; END OF RANGES; GATE OXIDE; GATED WINDOWS; GEIGER MODES; HIGH CONFIDENCE; INDUSTRY STANDARDS; ION DETECTORS; ION SENSING; LAY-OUT; LOW ENERGIES; MAGNETIC IMAGING; OPERATION TEMPERATURE; SINGLE ATOMS; SINGLE DONOR; SINGLE ION; SINGLE ION DETECTION; SINGLE PHOTON EMISSION; SINGLE-ION IMPLANTATION;

ATOMIC SPECTROSCOPY; DEFECTS; ELECTRON DEVICES; INTEGRATION; ION BOMBARDMENT; ION IMPLANTATION; PROBABILITY; WINDOWS;

DETECTORS;

EID: 76249093145 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/21/8/085201 Document Type: Article

Times cited : (24)

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