Random dopant induced threshold voltage lowering and fluctuations in sub 50 nm MOSFETs: A statistical 3D 'atomistic' simulation study

Nanotechnology

Volumn 10, Issue 2, 1999, Pages 153-158

  Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STATISTICAL METHODS; THRESHOLD VOLTAGE;

POISSON EQUATION; THREE DIMENSIONAL ATOMISTIC SIMULATION;

MOSFET DEVICES;

EID: 0032636539     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/10/2/309     Document Type: Article

References (18)

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