Negative differential resistance in mono and bilayer graphene p-n junctions

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1334-1336

  Fiori, Gianluca ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Bilayer graphene; Esaki diodes; monolayer; NEGF; quantum tunneling

Indexed keywords

ANALOG ELECTRONICS; ANALYTICAL EXPRESSIONS; BI-LAYER; ELECTRICAL CHARACTERISTIC; ESAKI DIODE; NEGATIVE DIFFERENTIAL RESISTANCES; NEGF; NON-EQUILIBRIUM GREEN'S FUNCTION; P-N JUNCTION; PARAMETER SPACES; QUANTUM TUNNELING; ROOM TEMPERATURE; SCHRDINGER EQUATIONS; SELF-CONSISTENT SOLUTION; TIGHT BINDING MODEL;

GREEN'S FUNCTION; MONOLAYERS; NEGATIVE RESISTANCE; SEMICONDUCTOR JUNCTIONS; TUNNEL DIODES;

GRAPHENE;

EID: 80053566711     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2162392     Document Type: Article

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