Three-terminal graphene negative differential resistance devices

ACS Nano

Volumn 6, Issue 3, 2012, Pages 2610-2616

  Wu, Yanqing ^a   Farmer, Damon B ^a   Zhu, Wenjuan ^a   Han, Shu Jen ^a   Dimitrakopoulos, Christos D ^a   Bol, Ageeth A ^a   Avouris, Phaedon ^a   Lin, Yu Ming ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

field effect transistor; grapheme; negative differential resistance

Indexed keywords

AMBIPOLAR BEHAVIOR; CARRIER TRANSFER; DRAIN BIAS; GRAPHEME; GRAPHENE DEVICES; HOLE CONDUCTION; MOLECULAR DEVICE; NEGATIVE DIFFERENTIAL RESISTANCE; NEGATIVE DIFFERENTIAL RESISTANCE DEVICE; NEGATIVE DIFFERENTIAL RESISTANCES; NEW MECHANISMS; OPERATION FLEXIBILITY; QUANTUM TUNNELING; TERAHERTZ APPLICATIONS; TWO-TERMINAL DEVICES;

FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAPHENE; GUNN DIODES; NEGATIVE RESISTANCE; TUNNEL DIODES;

EQUIPMENT;

EID: 84859135564     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn205106z     Document Type: Article

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