Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

Thin Solid Films

Volumn 457, Issue 1, 2004, Pages 109-113

  Ohta, J ^a   Fujioka, H ^a,b   Honke, T ^a   Oshima, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Laser ablation; Nitrides; Strucural properties

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; EPITAXIAL GROWTH; HALL EFFECT; KINETIC ENERGY; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; NITRIFICATION; PULSED LASER DEPOSITION; SAPPHIRE; X RAY DIFFRACTION;

BUFFER LAYERS; LATTICE MISMATCH; OPTICAL BAND GAP; STRUCTURAL PROPERTIES;

INDIUM COMPOUNDS;

EID: 2442480379     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.003     Document Type: Conference Paper

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