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Applied Physics Letters

Volumn 98, Issue 22, 2011, Pages

A InGaN/GaN quantum dot green (λ=524 nm) laser

(5) Zhang, Meng a Banerjee, Animesh a Lee, Chi Sen a Hinckley, John M a Bhattacharya, Pallab a

a UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAM ETCHING; GAN SUBSTRATE; INGAN/GAN; LASER FACETS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SELF-ORGANIZED; TEMPERATURE RANGE; WALLPLUG EFFICIENCY;

GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79958806254 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3596436 Document Type: Article

Times cited : (80)

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