Metal-organic molecular beam epitaxy growth of InN films on highly orientated TCO/Si(1 0 0) substrates

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4963-4967

  Kuo, Shou Yi ^a   Chen, Wei Chun ^b   Hsiao, Chien Nan ^b   Lai, Fang I ^c  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL APPLIED RESEARCH LABORATORIES   (Taiwan)

^c YUAN ZE UNIVERSITY   (Taiwan)

Author keywords

A1. Crystal structure; A1. X ray diffraction; A3. Metal organic molecular beam epitaxy; B1. Nitrides

Indexed keywords

BUFFER LAYERS; CARRIER CONCENTRATION; CARRIER MOBILITY; CIVIL AVIATION; CONCENTRATION (PROCESS); CRYSTAL GROWTH; DIFFRACTION; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FIELD EMISSION; FLOW RATE; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; MAGNETIC FIELD EFFECTS; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; OPTICAL WAVEGUIDES; POWDERS; SECONDARY EMISSION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SILICON WAFERS; SURFACE MORPHOLOGY; SURFACE PHENOMENA; SURFACE STRUCTURE; THICK FILMS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

A1. CRYSTAL STRUCTURE; A1. X-RAY DIFFRACTION; A3. METAL-ORGANIC MOLECULAR BEAM EPITAXY; B1. NITRIDES; C -AXIS; ELECTRICAL PROPERTIES; FIELD EMISSION SCANNING ELECTRON MICROSCOPIES; HALL MEASUREMENTS; HETEROEPITAXIAL GROWTHS; HETEROEPITAXIAL SYSTEMS; HEXAGONAL WURTZITE STRUCTURES; HIGH GROWTH RATES; INN FILMS; ORGANIC MOLECULAR BEAM EPITAXIES; ROOM TEMPERATURES; SEM IMAGES; STRUCTURE PROPERTIES; SURFACE IMPERFECTIONS; TRIMETHYLINDIUM; WURTZITE INDIUM NITRIDES; X-RAY DIFFRACTIONS; XRD PATTERNS; ZNO BUFFER LAYERS;

CRYSTAL STRUCTURE;

EID: 56249084524     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.094     Document Type: Article

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