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Applied Physics Letters

Volumn 102, Issue 3, 2013, Pages

Piezoresistance of nano-scale silicon up to 2 GPa in tension

(4) Kumar Bhaskar, Umesh a Pardoen, Thomas a Passi, Vikram b Raskin, Jean Pierre a

a UNIVERSITÉ CATHOLIQUE DE LOUVAIN (Belgium)

b INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT CONCENTRATIONS; NANO SCALE; ON CHIPS; P-TYPE; PIEZORESISTANCE; UNIAXIAL TENSIONS;

TENSILE TESTING;

SILICON;

EID: 84872908973 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4788919 Document Type: Article

Times cited : (27)

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