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Physical Review Letters

Volumn 108, Issue 25, 2012, Pages

Piezoresistance in silicon at uniaxial compressive stresses up to 3 GPa

(5) Milne, J S a Favorskiy, I a Rowe, A C H a Arscott, S b Renner, Ch c

a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE (France)

b INSTITUT D ELECTRONIQUE (France)

c UNIVERSITY OF GENEVA (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO DENSITY FUNCTIONAL THEORIES (DFT); CHARGE TRANSFER MODEL; CRYSTAL AXES; CRYSTALLINE SILICONS; HOLE DISTRIBUTION; N TYPE SILICON; P-TYPE; PIEZORESISTANCE; ROOM TEMPERATURE; STRAINED-SILICON; UNIAXIAL COMPRESSIVE;

CALCULATIONS; CHARGE TRANSFER; DENSITY FUNCTIONAL THEORY; HOLE MOBILITY;

COMPRESSIVE STRESS;

EID: 84862513724 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.108.256801 Document Type: Article

Times cited : (20)

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