Mobility improvement in nanowire junctionless transistors by uniaxial strain

Applied Physics Letters

Volumn 97, Issue 4, 2010, Pages

  Raskin, Jean Pierre ^a   Colinge, Jean Pierre ^b   Ferain, Isabelle ^b   Kranti, Abhinav ^b   Lee, Chi Woo ^b   Akhavan, Nima Dehdashti ^b   Yan, Ran ^b   Razavi, Pedram ^b   Yu, Ran ^b  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CONDUCTION; BULK SILICON; CURRENT DRIVES; DOPING CONCENTRATION; HEAVILY DOPED; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; P-TYPE SILICON; PIEZO-RESISTIVE; PIEZORESISTANCE COEFFICIENTS; SILICON NANOWIRES; SURFACE CHANNEL; UNI-AXIAL STRAINS;

DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; MOSFET DEVICES; NANOWIRES; SEMICONDUCTING SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955739393     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3474608     Document Type: Article

References (9)

1. S. E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. Klaus, Z. Ma, B. McIntyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr, and Y. El-Mansy, IEEE Trans. Electron Devices IETDAI 0018-9383 51-4, 191 (2004).
2. R. E. Belford, J. Electron. Mater. JECMA5 0361-5235 30, 807 (2001). 10.1007/s11664-001-0061-8
3. S. Takagi, T. Mizuno, T. Tezuka, N. Sugiyama, T. Numata, K. Usuda, Y. Moriyama, S. Nakaharai, J. Koga, A. Tanabe, and T. Maeda, Appl. Surf. Sci. ASUSEE 0169-4332 224, 241 (2004). 10.1016/j.apsusc.2003.08.070
4. F. Rochette, M. Casś, M. Mouis, A. Haziot, T. Pioger, G. Ghibaudo, and F. Boulanger, Solid-State Electronics 53, 392 (2009). 10.1016/j.sse.2009. 01.017
5. N. Serra, F. Conzatti, D. Esseni, M. De Michielis, P. Palestri, L. Selmi, S. Thomas, T. E. Whall, E. H. C. Parker, D. R. Leadley, L. Witters, A. Hikavyy, M. J. Htch, F. Houdellier, E. Snoeck, T. J. Wang, W. C. Lee, G. Vellianitis, M. J. H. van Dal, B. Duriez, G. Doornbos, and R. J. P. Lander, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2009, 71.
6. M. Chu, Y. Sun, U. Aghoram, and S. E. Thompson, Annu. Rev. Mater. Res. ARMRCU 1531-7331 39, 203 (2009). 10.1146/annurev-matsci-082908-145312
7. J. -P. Colinge, C. W. Lee, A. Afzalian, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi, B. O'Neill, A. Blake, M. White, A. M. Kelleher, B. McCarthy, and R. Murphy, Nat. Nanotechnol. NNAABX 1748-3387 5, 225 (2010). 10.1038/nnano.2010.15
8. Y. Kanda, IEEE Trans. Electron Devices IETDAI 0018-9383 29, 64 (1982). 10.1109/T-ED.1982.20659
9. C. W. Lee, A. Borne, I. Ferain, A. Afzalian, R. Yan, N. Dehdashti, and J. -P. Colinge, IEEE Trans. Electron Devices IETDAI 0018-9383 57, 620 (2010). 10.1109/TED.2009.2039093