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Journal of Physics and Chemistry of Solids

Volumn 74, Issue 3, 2013, Pages 504-508

High mobility formation of p-type Al doped ZnO:N films annealed under NH3 ambient

(3) Kalyanaraman, S a Thangavel, R b Vettumperumal, R a

a SRI PARAMAKALYANI COLLEGE (India)

b INDIAN SCHOOL OF MINES (India)

Author keywords

C. Raman spectroscopy

Indexed keywords

AL-DOPED ZNO; AMBIENTS; ANNEALING PROCESS; CO-DOPED; HALL MEASUREMENTS; HIGH MOBILITY; LOW RESISTIVITY; P-TYPE; P-TYPE BEHAVIORS; POLYCRYSTALLINE; SAPPHIRE SUBSTRATES; SPIN-COATING METHOD; VISIBLE RANGE; ZNO;

ALUMINUM; METALLIC FILMS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ZINC OXIDE;

EID: 84872785689 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/j.jpcs.2012.11.019 Document Type: Article

Times cited : (23)

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