Origin of p-Type doping in zinc oxide nanowires induced by phosphorus doping: A first principles study

Journal of Physical Chemistry C

Volumn 113, Issue 22, 2009, Pages 9541-9545

  Qin, Rui ^a   Zheng, Jiaxin ^a   Lu, Jing ^a   Wang, Lu ^a   Lai, Lin ^a   Luo, Guangfu ^a   Zhou, Jing ^a   Li, Hong ^a   Gao, Zhengxiang ^a   Li, Guangping ^b   Mei, Wai Ning ^c  

^a PEKING UNIVERSITY   (China)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c UNIVERSITY OF NEBRASKA AT OMAHA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX DEFECTS; DOPING EFFICIENCY; EDGE SITES; FIRST PRINCIPLE CALCULATIONS; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; HIGH CONCENTRATION; INTERSTITIAL DEFECTS; P TYPE ZNO; P-TYPE DOPING; PHOSPHORUS DOPING; PHOSPHORUS-DOPED; RICH CONDITIONS; TETRAHEDRAL SITES; VACANCY DEFECTS; ZINC OXIDE NANOWIRES; ZNO NANOWIRES;

DEFECTS; DOPING (ADDITIVES); ELECTRIC WIRE; ELECTRONIC PROPERTIES; LEAD; NANOWIRES; PHOSPHORUS; POINT DEFECTS; SEMICONDUCTING ZINC COMPOUNDS; VACANCIES; ZINC OXIDE;

ZINC;

EID: 67149128219     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp811236v     Document Type: Article

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