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Vacuum

Volumn 85, Issue 9, 2011, Pages 881-886

AlN codoping and fabrication of ZnO homojunction by RF sputtering

(4) Balakrishnan, L a Premchander, P b Balasubramanian, T a Gopalakrishnan, N a

a NATIONAL INSTITUTE OF TECHNOLOGY (India)

b Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

Characterization; Codoping; Homojunction; Sputtering; ZnO

Indexed keywords

AL-N CODOPING; ALN; BARRIER HEIGHTS; CO-DOPED; CO-DOPED ZNO; CODOPING; D-SPACE; DONOR-ACCEPTORS; DOPED ZNO; ENERGY-BAND DIAGRAM; HALL MEASUREMENTS; HIGH BREAKDOWN VOLTAGE; HOMOJUNCTION; IDEALITY FACTORS; JUNCTION PARAMETERS; LOW TEMPERATURES; N INCORPORATION; NEAR BAND EDGE EMISSIONS; P-N JUNCTION; P-TYPE; RECTIFICATION BEHAVIOR; RECTIFICATION RATIO; RED SHIFT; RF-MAGNETRON SPUTTERING; RF-SPUTTERING; ROOM TEMPERATURE; SERIES RESISTANCES; SI (100) SUBSTRATE; XPS ANALYSIS; XRD; ZNO;

DOPING (ADDITIVES); ELECTRIC RECTIFIERS; ENERGY DISPERSIVE SPECTROSCOPY; FABRICATION; HETEROJUNCTION BIPOLAR TRANSISTORS; HOLE CONCENTRATION; MAGNETRON SPUTTERING; SEMICONDUCTOR JUNCTIONS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ZINC OXIDE;

EID: 79952439739 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/j.vacuum.2011.01.003 Document Type: Article

Times cited : (16)

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