Reproducibility and stability of N-Al codoped p-type ZnO thin films

Journal of Materials Science

Volumn 41, Issue 2, 2006, Pages 467-470

  Lu, J G ^a   Zhu, L P ^a   Ye, Z Z ^a   Zhuge, F ^a   Zhao, B H ^a   Ma, D W ^a   Wang, L ^a   Huang, J Y ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HALL EFFECT; LIGHT TRANSMISSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; X RAY DIFFRACTION; ZINC OXIDE;

HALL MOBILITY; N-AL CODOPING METHOD; OPTICAL QUALITY; P-TYPE CHARACTERISTICS;

THIN FILMS;

EID: 33644521748     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10853-005-2279-y     Document Type: Article

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