Multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts

ECS Journal of Solid State Science and Technology

Volumn 1, Issue 2, 2012, Pages

  Zhang, Xingui ^a   Guo, Hua Xin ^a   Gong, Xiao ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84872743226     PISSN: 21628769     EISSN: 21628777     Source Type: Journal    
DOI: 10.1149/2.014202jss     Document Type: Article

References (36)

1. H.-C. Chin, X. Gong, L. Wang, and Y.-C. Yeo, Electrochem. Solid-state Lett., 13, H440 (2010).
2. X. Gong, X. Ivana, H.-C. Chin, Z. Zhu, Y.-R. Lin, C.-H. Ko, C. H. Wann, and Y.-C. Yeo, Electrochem. Solid-state Lett., 14, H117 (2011).
3. M. Radosavljevic, B. Chu-Kung, S. Corcoran, G. Dewey, M. K. Hudait, J. M. Fastenau, J. Kavalieros, W. K. Liu, D. Lubyshev, and M. et al. Metz, Tech. Dig. - Int. Electron Devices Meet., 2009, 319.
4. H.-J. Oh, S. A. B. Suleiman, and S. Lee, J. Electrochem. Soc., 157(11), H1051 (2010).
5. Y. Xuan, Y. Q. Wu, and P. D. Ye, IEEE Electron Device Lett., 29, 294 (2008).
6. S. H. Kim,M.Yokoyama, N. Taoka, R.Nakane, T.Yasuda,O. Ichikawa,N. Fukuhara, M. Hata,M. Takenaka, and S. Takagi, Tech. Dig. - Int. Electron Devices Meet., 2011, 311.
7. T.-W. Kim, D.-H. Kim, and J. A. del Alamo, Tech. Dig. - Int. Electron Devices Meet., 2010, 696.
8. H. Zhao, Y.-T. Chen, J. H. Yum, Y. Wang, N. Goel, and J. C. Lee, Appl. Phys. Lett., 94, 193502 (2009).
9. J. Hu, K. C. Saraswat, and H.-S. Philip Wong, Appl. Phys. Lett., 98, 062107 (2011).
10. S. Datta, Microelectron. eng., 84, 2133 (2007).
11. R. J. W. Hill, C. Park, J. Barnett, J. Price, J. Goel, W. Y. Loh, J. Oh, C. E. Smith, P. Kirsch, P. Majhi, and R. Jammy, Tech. Dig. - Int. Electron Devices Meet., 2010, 6.2.1.
12. T. Ashley, M. T. Emeny, D. G. Hayes, K. P. Hilton, R. Jefferies, J. O. Maclean, S. J. Smith, A. W.-H. Tang, D. J. Wallis, and P. J. Webber, Tech. Dig. - Int. Electron Devices Meet., 2009, 35.1.1.
13. S. Datta, G. Dewey, J. M. Fastenau, M. K. Hudait, D. Loubychev, W. K. Liu, M. Radosavljevic, W. Rachmady, and R. Chau, IEEE Electron Device Lett., 28, 685 (2007).
14. Y. Sun, E. W. Kiewra, J. P. de Souza, J. J. Bucchignano, K. E. Fogel, D. K. Sadana, and G. G. Shahidi, Tech. Dig. - Int. Electron Devices Meet., 2008, 1.
15. H.-C. Chin, X. Liu, X. Gong, and Y.-C. Yeo, Dig. IEEE Trans. Electron Devices, 57, 973 (2010).
16. Y. Yonai, T. Kanazawa, S. Ikeda, and Y. Miyamoto, Tech. Dig. - Int. Electron Devices Meet., 2011, 307.
17. M. Egard, L. Ohlsson, B. M. Borg, F. Lenrick, R.Wallenberg, L.-E.Wernersson, and E. Lind, Tech. Dig. - Int. Electron Devices Meet., 2011, 303.
18. N. Waldron, D.-H. Kim, and J. A. del Alamo, Tech. Dig. - Int. Electron Devices Meet., 2007, 633.
19. R. Terao, T. Kanazawa, S. Ikeda, Y. Yonai, A. Kato, and Y. Miyamoto, Appl. Phys. Express., 4, 054201 (2011).
20. Y. Q. Wu, R. S. Wang, T. Shen, J. J. Gu, and P. D. Ye, Tech. Dig. - Int. Electron Devices Meet., 2009, 331.
21. H.-C. Chin, X. Gong, L. Wang, H. K. Lee, L. Shi, and Y.-C. Yeo, IEEE Electron Device Lett., 32, 146 (2011).
22. M. Radosavljevic, G. Dewey, J. M. Fastenau, J. Kavalieros, R. Kotlyar, B. Chu-Kung, W. K. Liu, D. Lubyshev, M. Metz, and K. et al. Millard, Tech. Dig. - Int. Electron Devices Meet., 2010, 126.
23. M. Radosavljevic, G. Dewey, D. Basu, J. Boardman, B. Chu-Kung, J. M. Fastenau, S. Kabehie, J. Kavalieros, V. Le, and W. K. Liu et al., Tech. Dig. - Int. Electron Devices Meet., 2011, 765.
24. J. J. Gu, Y. Q. Liu, Y. Q. Wu, R. Colby, R. G. Gordon, and P. D. Ye, Tech. Dig. - Int. Electron Devices Meet., 2011, 769.
25. H. Guo,X. Zhang,H.-C. Chin,X. Gong, S.-M.Koh, C. Zhan, G.-L. Luo, C.-Y. Chang, H.-Y. Lin, and C.-H. Chien et al., in proceedings of the VLSI Technology, Systems and Application (VLSI-TSA) , IEEE, 2010, 152.
26. X. Zhang, H. Guo, C.-H. Ko, C. H. Wann, C.-C. Cheng, H.-Y. Lin, H.-C. Chin, X. Gong, P. S. Y. Lim, and G.-L. Luo et al., Dig. Tech. Pap.- Symp. Technol., 2010, 233.
27. X. Zhang, H. Guo, H.-Y. Lin, C.-C. Cheng, C.-H. Ko, C. H. Wann, G.-L. Luo, C.-Y. Chang, C.-H. Chien, and Z.-Y. Han et al., J. Vac. Sci. Technol. B, 29(3), 032209 (2011).
28. X. Zhang, H. Guo, X. Gong, Q. Zhou, Y.-R. Lin, H.-Y. Lin, C.-H. Ko, C. H. Wann, and Y.-C. Yeo, Electrochem. Solid-state Lett., 14, H60 (2011).
29. X. Zhang, H. Guo, H.-Y. Lin, H.-Y. Ivana, X. Gong, Q. Zhou, Y.-R. Lin, C.-H. Ko, C. H. Wann, and Y.-C. Yeo, Electrochem. Solid-state Lett., 14, H212 (2011).
30. X. Zhang, H. Guo, X. Gong, Q. Zhou, H.-Y. Lin, Y.-R. Lin, C.-H. Ko, C. H. Wann, and Y.-C. Yeo, in proceedings of the VLSI Technology, Systems and Application (VLSI-TSA), IEEE, 2011, 26.
31. X. Zhang, X. Ivana, H. X. Guo, X. Gong, Q. Zhou, and Y.-C. Yeo, J. Electrochem. Soc., 159(5), H511 (2012).
32. S. H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, and H. Yamada et al., Tech. Dig. - Int. Electron Devices Meet., 2010, 26.6.1.
33. G. C. Desalvo, W. F. Tseng, and J. Comas, J. Electrochem. Soc., 139(3), 831 (1992).
34. S. Subramanian, S. Ivana, Q. Zhou, X. Zhang, M. Balakrishnan, and Y.-C. Yeo, J. Electrochem. Soc., 159(1), H16 (2012).
35. L. Czornomaz,M.El Kazzi,D.Caimi, P.Machler, C. Rossel, M. Bjoerk,C.Marchiori, and J. Fompeyrine, European Solid-State Device Research Conference (ESSDERC), 2011, 219.
36. A. Dixit, A. Kottantharayil, N. Collaert, M. Goodwin, M. Jurczak, and K. De Meyer, Dig. IEEE Trans. Electron Devices, 52, 1132 (2005).