Interface engineering for InGaAs n-MOSFET application using plasma PH 3-N2 passivation

Journal of the Electrochemical Society

Volumn 157, Issue 11, 2010, Pages

  Oh, Hoon Jung ^a   Suleiman, Sumarlina Azzah Bte ^a   Lee, Sungjoo ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITED; EXCHANGE REACTION; FREQUENCY DISPERSION; GATE STACKS; HIGH ELECTRON MOBILITY; INTERFACE ENGINEERING; INTERFACE ENGINEERING TECHNIQUE; INTERFACE QUALITY; INVERSION CAPACITANCE; LOW PRESSURES; METAL GATE; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; METAL-ORGANIC; MOSFETS; NITROGEN ATOM; NMOSFET; PLASMA TREATMENT; PROCESS CONDITION; PROCESS WINDOW; SELF-ALIGNED GATE; SUBTHRESHOLD SLOPE; THEORETICAL VALUES;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLAYERS; MOS DEVICES; MOSFET DEVICES; NITRIDES; PASSIVATION; PHOSPHORUS; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM; STOICHIOMETRY; TANNING; TANTALUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

PH;

EID: 77957698752     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3489946     Document Type: Article

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