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Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

Dependence of Mg acceptor levels in InN on doping density and temperature

(5) Fujiwara, Masayuki a Ishitani, Yoshihiro a Wang, Xinqiang b Kusakabe, Kazuhide a Yoshikawa, Akihiko a

a CHIBA UNIVERSITY (Japan)

b PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR ACTIVATION; ACCEPTOR LEVELS; ACCEPTOR STATE; COULOMB POTENTIAL; DENSITY LIMIT; DIELECTRIC FUNCTIONS; DOPING DENSITIES; ELECTRONIC TRANSITION; HEAVY HOLES; HOLE DENSITIES; HOLE GENERATION; INFRARED REFLECTANCE; INN FILMS; IONIZED ACCEPTOR; MG-DOPED; REFLECTANCE SPECTRUM; ROOM TEMPERATURE; TEMPERATURE INCREASE; TRANSMISSION SPECTRUMS;

ACTIVATION ENERGY; ELECTRIC FIELDS; REFLECTION;

SEMICONDUCTOR DOPING;

EID: 81355132379 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3656990 Document Type: Article

Times cited : (12)

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