Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon-hole plasmon properties

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Ishitani, Yoshihiro ^a   Fujiwara, Masayuki ^a   Wang, Xinqiang ^a   Che, Song Bek ^a   Yoshikawa, Akihiko ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC MOBILITY; BULK-LIKE; CAPACITANCE-VOLTAGE TECHNIQUES; DAMPING RATE; ELLIPSOMETRY MEASUREMENTS; HOLE DENSITIES; HOLE SCATTERING; INFRARED ELLIPSOMETRY; INFRARED REFLECTANCE; INN FILMS; LARGE EFFECTIVE; LO PHONONS; LONGITUDINAL OPTICAL PHONONS; MG-DOPED; MG-DOPING; NORMAL MODES; OPTICAL TECHNIQUE; REFLECTANCE SPECTRUM; SCATTERING RATES; THREADING DISLOCATION;

ANISOTROPY; DOPING (ADDITIVES); ELLIPSOMETRY; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; PHONONS; PLASMONS; REFLECTION; SPECTRUM ANALYSIS;

HOLE MOBILITY;

EID: 79251634519     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880949     Document Type: Article

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