Anisotropy of the dielectric function for wurtzite InN

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 591-597

  Goldhahn, R ^a   Winzer, A T ^a   Cimalla, V ^a   Ambacher, O ^a   Cobet, C ^b   Richter, W ^b   Esser, N ^c   Furthmuller J ^d   Bechstedt, F ^d   Lu, H ^e   Schaff, W J ^e  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c Department Berlin   (Germany)

^d FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^e Department of Population Medicine and Diagnostic Sciences   (United States)

Author keywords

Anisotropy; Dielectric function; Ellipsometry; InN

Indexed keywords

ANISOTROPY; DATA REDUCTION; DIELECTRIC PROPERTIES; ELECTRIC FIELDS; ELECTRON DIFFRACTION; ELECTRON ENERGY LEVELS; ELLIPSOMETRY; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; TENSORS; X RAY DIFFRACTION ANALYSIS;

BRILLOUIN ZONES; DIELECTRIC FUNCTION CALCULATIONS; OPTICAL ANISOTROPY; OPTICAL TRANSITIONS; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 9944265712     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.016     Document Type: Article

References (15)

1. S.Yu. Davydov, A.A. Klochikhin, R.P. Seisyan, V.V. Emtsev, S.V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A.V. Mudryi, J. Aderhold, O. Semchinova, J. Graul, Phys. Status Solidi b 229 (2002) R1.
2. J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, Y. Nanishi, Appl. Phys. Lett. 80 (2002) 3967.
3. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, E. Kurimoto, Appl. Phys. Lett. 81 (2002) 1246.
4. T.L. Tansley, C.P. Foley, J. Appl. Phys. 59 (1986) 3241.
5. R. Goldhahn, S. Shokhovets, V. Cimalla, L. Spiess, G. Ecke, O. Ambacher, J. Furthmüller, F. Bechstedt, H. Lu, W.J. Schaff, Mater. Res. Soc. Sympos. Proc. 743 (2003) L5.9.
6. M. Drago, T. Schmidtling, U.W. Pohl, S. Peters, W. Richter, Phys. Status Solidi c 0 (2003) 2842.
7. F. Bechstedt, J. Furthmüller, M. Ferhat, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, V.Yu. Davydov, O. Ambacher, R. Goldhahn, Phys. Status Solidi a 195 (2003) 628.
8. C. Persson, R. Ahuja, A. Ferriera da Silva, B. Johansson, J. Phys.: Condens. Matter 13 (2001) 8945.
9. H. Lu, W.J. Schaff, L.F. Eastman, J. Wu, W. Walukiewicz, V. Cimalla, O. Ambacher, Appl. Phys. Lett. 83 (2003) 1136.
10. C. Cobet, N. Esser, J.T. Zettler, W. Richter, P. Waltereit, O. Brandt, K.H. Ploog, S. Peters, N.V. Edwards, O.P.A. Lindquist, M. Cardona, Phys. Rev. B 64 (2001) 165203.
11. H. Yao, C.H. Yan, J. Appl. Phys. 85 (1999) 6717.
12. S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, W. Richter, J. Appl. Phys. 94 (2003) 307.
13. R. Goldhahn, Acta Phys. Polon. A 104 (2003) 123.
14. B. Gil, in: J.I. Pankove, T.D. Moustakas (Eds.), Gallium Nitride (GaN) II, Semiconductors and Semimetals, vol. 57, Academic Press, San Diego, 1999, p. 209.
15. M. Cardona, N.E. Christensen, Solid State Commun. 116 (2000) 421.