Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 31, Issue 1, 2013, Pages

  Kawamura, Yumi ^a   Hattori, Nozomu ^b   Miyatake, Naomasa ^b   Uraoka, Yukiharu ^a,c  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b MITSUI ENGINEERING AND SHIPBUILDING CO LTD   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; FIELD-EFFECT MOBILITIES; HIGH MOBILITY; LOW TEMPERATURES; OXYGEN GAS; PREFERRED ORIENTATIONS; RESIDUAL CARBON; THIN-FILM TRANSISTOR (TFTS); ZINC OXIDE (ZNO); ZNO; ZNO FILMS; ZNO THIN FILM;

ATOMIC LAYER DEPOSITION; DEPOSITS; METALLIC FILMS; OXIDANTS; PLASMA SOURCES; PULSED LASER DEPOSITION; THIN FILMS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84871865655     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4771666     Document Type: Article

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