Low-Temperature-Processed zinc oxide thin-film transistors fabricated by plasma-assisted atomic layer deposition

Japanese Journal of Applied Physics

Volumn 51, Issue 2 PART 2, 2012, Pages

  Kawamura, Yumi ^a   Tani, Mai ^a   Hattori, Nozomu ^b   Miyatake, Naomasa ^b   Horita, Masahiro ^a   Ishikawa, Yasuaki ^a   Uraoka, Yukiharu ^a,c  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b MITSUI ENGINEERING AND SHIPBUILDING CO LTD   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; FABRICATION PROCESS; GATE INSULATOR; HIGH MOBILITY; LOW TEMPERATURES; NEGATIVE CHARGE; NEGATIVE SHIFT; PLASMA ASSISTED ATOMIC LAYER DEPOSITIONS; TRANSFER CHARACTERISTICS; ZNO;

ALUMINUM; ATOMIC LAYER DEPOSITION; FABRICATION; PULSED LASER DEPOSITION; THIN FILMS; THRESHOLD VOLTAGE; VAPOR DEPOSITION; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84857499390     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.02BF04     Document Type: Article

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