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Volumn 72, Issue 12, 2011, Pages 1393-1396
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Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering
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Author keywords
A. Inorganic compounds; A. Oxides; D. Electrical properties
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Indexed keywords
A. INORGANIC COMPOUNDS;
A. OXIDES;
ACTIVE LAYER;
ELECTRICAL PROPERTY;
FIELD-EFFECT MOBILITIES;
HIGH TEMPERATURE;
ON/OFF RATIO;
RADIO FREQUENCY MAGNETRON SPUTTERING;
ZNO;
ZNO ACTIVE LAYERS;
ZNO THIN FILM;
ELECTRIC FIELD EFFECTS;
FILM THICKNESS;
INORGANIC COMPOUNDS;
MAGNETRON SPUTTERING;
METALLIC FILMS;
OPTICAL FILMS;
RADIO;
RADIO WAVES;
SILICON COMPOUNDS;
THIN FILM DEVICES;
THIN FILM TRANSISTORS;
THIN FILMS;
TRANSISTORS;
ZINC OXIDE;
ELECTRIC PROPERTIES;
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EID: 80054940914
PISSN: 00223697
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jpcs.2011.07.005 Document Type: Article |
Times cited : (21)
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References (24)
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