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Volumn 72, Issue 12, 2011, Pages 1393-1396

Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering

Author keywords

A. Inorganic compounds; A. Oxides; D. Electrical properties

Indexed keywords

A. INORGANIC COMPOUNDS; A. OXIDES; ACTIVE LAYER; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; HIGH TEMPERATURE; ON/OFF RATIO; RADIO FREQUENCY MAGNETRON SPUTTERING; ZNO; ZNO ACTIVE LAYERS; ZNO THIN FILM;

EID: 80054940914     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2011.07.005     Document Type: Article
Times cited : (21)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.