SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 518, Issue 11, 2010, Pages 3022-3025

Characteristics of laser-annealed ZnO thin film transistors

(7) Kim, Jun Je a Bak, Jun Yong a Lee, Jong Hoon a Kim, Hong Seung a Jang, Nak Won a Yun, Young a Lee, Won Jae b

a Korea Maritime University (South Korea)

b Dong Eui University (South Korea)

Author keywords

Bottom gate; Laser annealing; ZnO TFT

Indexed keywords

ANNEALING EFFECTS; BOTTOM GATE; CRYSTALLINE QUALITY; DIFFRACTION PEAKS; ENHANCEMENT MODES; FIELD-EFFECT MOBILITIES; LASER ANNEALING; LOW TEMPERATURES; ON/OFF CURRENT RATIO; RADIO FREQUENCY SPUTTERING; ROOM TEMPERATURE; SI SUBSTRATES; ZNO; ZNO FILMS; ZNO LAYERS; ZNO THIN FILM;

ANNEALING; GATE DIELECTRICS; GATES (TRANSISTOR); METALLIC FILMS; OPTICAL FILMS; PULSED LASER APPLICATIONS; SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE;

ZINC OXIDE;

EID: 77649138511 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.09.190 Document Type: Article

Times cited : (26)

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