Effect of post-thermal annealing of thin-film transistors with ZnO channel layer fabricated by atomic layer deposition

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Kawamura, Yumi ^a   Horita, Masahiro ^a   Uraoka, Yukiharu ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT GAS; ANNEALING TEMPERATURES; BIAS STRESS; CHANNEL LAYERS; CRYSTALLINE MODIFICATIONS; ELECTRICAL CHARACTERISTIC; HYDROGEN CONCENTRATION; LARGE SHIFTS; OXYGEN AMBIENT; POST-THERMAL ANNEALING; SECONDARY IONS; SUBTHRESHOLD SWING; TRANSFER CHARACTERISTICS; ZNO; ZNO FILMS;

ANNEALING; DEPOSITION; FABRICATION; HOLOGRAPHIC INTERFEROMETRY; OXIDE FILMS; OXYGEN; PHOTODEGRADATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ORGANIC COMPOUNDS; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77952689857     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DF19     Document Type: Article

References (19)

1. R. B. M. Cross and M. M. D. Souza: Appl. Phys. Lett. 89 (2006) 263513.
2. U.̈ Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S. J. Cho, and H. Morkoç: J. Appl. Phys. 98 (2005) 041301.
3. Y. Ohya, T. Niwa, T. Ban, and Y. Takahashi: Jpn. J. Appl. Phys. 40 (2001) 297.
4. S. Matsuda, K. Kitamura, Y. Okumura, and S. Miyatake: J. Appl. Phys. 93 (2003) 1624.
5. R. L. Hoffman, B. J. Norris, and J. F. Wager: Appl. Phys. Lett. 82 (2003) 733.
6. P. F. Carcia, R. S. McLearn, M. H. Reilly, and G. Nunes: Appl. Phys. Lett. 82 (2003) 1117.
7. E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins: Thin Solid Films 487 (2005) 205.
8. K. Murata, K. Washio, N. Miyatake, Y. Mori, H. Tachibana, Y. Uraoka, and T. Fuyuki: ECS Trans. 11 (2007) No.7, 31.
9. S. Kwon, S. Bang, S. Lee, S. Jeon, W. Jeong, H. Kim, S. C. Gong, H. J. Chang, H. Park, and H. Jeon: Semicond. Sci. Technol. 24 (2009) 035015.
10. D. H. Levy, D. Freeman, S. F. Nelson, P. J. Cowdery-Corvan, and L. M. Irving: Appl. Phys. Lett. 92 (2008) 192101.
11. S. J. Lim, S. J. Kwon, H. G. Kim, and J. S. Park: Appl. Phys. Lett. 91 (2007) 183517.
12. S. M. George, A.W. Ott, and J. W. Klaus: J. Phys. Chem. 100 (1996) 13121.
13. S. K. Kim, C. S. Hwang, S.-H. K. Park, and S. J. Yun: Thin Solid Films 478 (2005) 103.
14. M. Furuta, T. Hiramatsu, T. Matsuda, H. Nitta, and T. Hirao: Ext. Abstr. (5th Meet., 2008); Thin Film Materials and Devices Meet., 2008, p. 72 [in Japanese].
15. Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi: Jpn. J. Appl. Phys. 39 (2000) L1209.
16. A. R. Merticaru and A. J. Mouthaan: Thin Solid Films 383 (2001) 122.
17. M. J. Powell, C. van Berkel, and J. R. Hughes: Appl. Phys. Lett. 54 (1989) 1323.
18. F. R. Libsch and J. Kanicki: Appl. Phys. Lett. 62 (1993) 1286.
19. D.-H. Cho, S.-H. K. Park, S. Yang, C. Byun, S. M. Chung, W.-S. Cheong, J. Shin, M. K. Ryu, J. I. Lee, C.-S. Hwang, S. M. Yoon, H.-Y. Chu, and K. I. Cho: IDW'09 Dig., 2008, p. 1625.