Status of Si thin film transistors

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1196-1201

  Sameshima, T ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Insulator; Poly Si; TFT

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTALLIZATION; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; PULSED LASER APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

PULSED LASER CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 0032068210     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00299-3     Document Type: Article

References (43)

1. P.G. LeComber, W.E. Spear, A. Gaith, Electron. Lett. 15 (1979) 179.
2. M.J. Powell, IEEE Trans. Electron Devices 36 (1989) 2753.
3. N. Ibaraki, Digest of Technical Papers, 1995, Int. Workshop on Active-Matrix LiquidCrystal Displays, Osaka, Business Center for Academic Societies, Japan, 1995, p. 67.
4. S. Morozumi, Proc. 9th Int. Conf. on Display Research, Japan Display 89, 1989, p. 148.
5. S.D.S. Malhi, H. Shichijo, S.K. Banerjee, R. Sundaresan, M. Elahy, G.P. Pollack, W.F. Richardson, A.H. Shah, L.R. Hite, R.H. Womack, P.K. Chatterjee, H.W. Lam, IEEE Trans. Electron Devices 32 (1985) 258.
6. T. Ohshima, T. Noguchi, H. Hayashi, Jpn. J. Appl. Phys. 25 (1986) 291.
7. U. Mitra, B. Rossi, B. Khan, J. Electrochem. Soc. 138 (1991) 3420.
8. K. Kobayashi, H. Murai, T. Sakamoto, H. Tokioka, T. Sugawara, Y. Matsutani, H. Namizaki, M. Nunoshita, Extended Abstracts of the 1992 Int. Conf. on Solid State Devices and Materials, Tsukuba, 1992, p. 693.
9. A. Lewis, I.-Wei Wu, Trans. IEICE J76-C-II, 1993, p. 211.
10. T. Sameshima, S. Usui, Proc. Mat. Res. Soc. Symp. 71 (1986) 435.
11. K. Sera, F. Okumura, H. Uchida, S. Itoh, S. Kaneko, K. Hotta, IEEE Trans. Electron Devices 36 (1989) 2868.
12. E.L. Mathé, J.G. Maillou, A. Naudon, E. Fogarassy, M. Elliq, S. De Unamuro, Appl. Surf. Sci. 43 (1989) 142.
13. T. Sameshima, S. Usui, J. Appl. Phys. 74 (1993) 6592.
14. T. Sameshima, N. Takashima, K. Saitoh, N. Betsida, in: Y. Kuo (Ed.), Proc. Third Symp. Thin Film Transistor Technologies, Vol. 96-23, Electrochemical Society, Penning, NJ, 1996, p. 296.
15. T. Sameshima, K. Saitoh, M. Satoh, A. Tajima, N. Takashima, Jpn. J. Appl. Phys. Lett., 1997 (to be published).
16. M. Kohyama, R. Yamamoto, M. Doyama, Phys. Status Solidi B 137 (1986) 11.
17. T. Sameshima, M. Sekiya, M. Hara, N. Sano, A. Kohno, Proc. Mat. Res. Soc. Symp. 358 (1995) 927.
18. S. Shirai, T. Serikawa, IEEE Trans. Electron Devices 39 (1992) 450.
19. H. Kuriyama, T. Nohda, Y. Aya, T. Kuwahara, K. Wakisaka, S. Kiyama, T. Tsuda, Jpn. J. Appl. Phys. 33 (1994) 5657.
20. J.S. Im, H.J. Kim, Appl. Phys. Lett. 64 (1994) 2303.
21. R. Ishihara, W.-C. Yeh, T. Hattori, M. Matsumura, Jpn. J. Appl. Phys. 34 (1995) 1759.
22. S.-W. Lee, S.-K. Joo, Digest of Technical Papers, 1995, Int. Workshop on Active-Matrix Liquid Crystal Displays, Osaka, 1995, p. 113.
23. H. Matsumura, Jpn. J. Appl. Phys. 33 (1994) 1209.
24. T. Serikawa, S. Shirai, A. Okamoto, S. Suyama, Jpn. J. Appl. Phys. Lett. 28 (1989) 1871.
25. S. Kim, D.J. Stephen, G. Lucovsky, G.G. Fountain, R.J. Markunas, J. Vac. Sci. Technol. A 8 (1990) 2039.
26. T.W. Little, K. Tanaka, H. Koike, T. Nakazawa, I. Yudasaka, H. Ohshima, Jpn. J. Appl. Phys. 30 (1991) 3724.
27. A. Kohno, T. Sameshima, N. Sano, M. Sekiya, M. Hara, IEEE Trans. Electron Device 42 (1995) 251.
28. N. Sano, A. Kohno, M. Hara, M. Sekiya, T. Sameshima, Appl. Phys. Lett. 65 (1994) 162.
29. M. Rodder, S. Aur, IEEE Electron Device Lett. EDL 12 (1991) 233.
30. R.A. Ditizio, G. Liu, S.J. Fonash, B.-C. Hseih, D.W. Greve, Appl. Phys. Lett. 56 (1990) 1140.
31. I.-W. Wu, A.G. Lewis, T.-Y. Huang, A. Chiang, IEEE Electron Device Lett. 10 (1989) 123.
32. K. Baert, H. Murai, K. Kobayashi, H. Namizaki, M. Nunoshita, Jpn. J. Appl. Phys. 32 (1993) 2601.
33. T.C. Lee, G.W. Neudeck, J. Appl. Phys. 54 (1983) 199.
34. U. Mitra, B. Rossi, B. Khan, J. Electrochem. Soc. 138 (1991) 3420.
35. D. Jousse, S.L. Delage, S.S. Iyer, Phil. Mag. B 63 (1991) 443.
36. I. Yamamoto, H. Kuwano, Y. Saito, J. Appl. Phys. 71 (1992) 3350.
37. N. Sano, M. Sekiya, M. Hara, A. Kohno, T. Sameshima, IEEE Electron Device Lett. 16 (1995) 157.
38. 2 Interface, Plenum, New York, 1988, p. 139.
39. T. Sameshima, M. Satoh, Jpn. J. Appl. Phys. 36 (1997) L687.
40. T. Sameshima, Appl. Surf. Sci. 96-98 (1996) 352.
41. G. Ganguly, I. Sakata, A. Matsuda, J. Non-Cryst. Solids 198-200 (1996) 300.
42. K. Chen, H. Qin, X. Huang, K. Ikuta, A. Matsuda, K. Tanaka, J. Non-Cryst. Solids 198-200 (1996) 891.
43. R.G. Stewart, J. Dresner, S. Weisbrod, R.I. Huq, D. Plus, B. Mourey, B. Hepp, A. Dupont, SID International Symposium Digest of Technical Papers, Vol. 26, 1995, p. 89.